NTHL082N65S3F mosfet equivalent, power mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 70 mW
* Ultra Low Gate Charge (Typ. Qg = 81 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
* .
* Telecom / Ser.
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.
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